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Advance Technical Information
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N10P IXTT 110N10P
VDSS ID25
RDS(on)
= 100 = 110 = 15
V A m
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M
Maximum Ratings 100 100 20 V V V A A A A mJ J V/ns
TO-3P (IXTQ)
TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150
G
D
S
(TAB)
TO-268 (IXTT)
G
S D = Drain TAB = Drain
W C C C C
G = Gate S = Source
D (TAB)
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300
1.13/10 Nm/lb.in. 5.5 5.0 g g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150C
Characteristic Values Min. Typ. Max. 100 2.5 5.0 100 25 250 15 V V nA A A m
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99132(05/04)
(c) 2004 IXYS All rights reserved
IXTQ 110N10P IXTT 110N10P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 30 40 3550 VGS = 0 V, VDS = 25 V, f = 1 MHz 1370 440 21 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 (External) 25 65 25 110 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 62 S pF pF pF ns ns ns ns nC nC nC 0.31 K/W (TO-3P) 0.21 K/W TO-3P (IXTQ) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 110 250 1.5 130 2.0 A A V ns C TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 50 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2
IXTQ 110N10P IXTT 110N10P
Fig. 1. Output Characteristics @ 25C
110 100 90 80 VGS = 10V 9V 220 200 180 160 8V 9V VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2
140 120 100 80 60 7V 6V 8V
7V 6V 5V 1.4 1.6 1.8 2
40 20 0 0 1 2 3 4 5 6 7 8 9 10
V D S - Volts Fig. 3. Output Characteristics @ 150C
110 100 90 80 VGS = 10V 9V 2.4 2.2 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 55A I D = 110A
I D - Amperes
70 60 50 40 30 20 10 0 0 0.5 1 1.5
8V 7V
6V 5V
V D S - Volts
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
80 70 External Lead Current Limit
Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
3 2.8 2.6
R D S ( o n ) - Normalized
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 VGS = 15V
TJ = 175C
60
I D - Amperes
TJ = 25C
50 40 30 20 10 0
VGS = 10V
I D - Amperes
100 125 150 175 200 225 250
-50
-25
0
TC - Degrees Centigrade
25
50
75
100
125
150
175
(c) 2004 IXYS All rights reserved
IXTQ 110N10P IXTT 110N10P
Fig. 7. Input Adm ittance
250 225 200 TJ = -40C 25C 150C 70 60 50
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
175 150 125 100 75 50 25 0 4 5 6 7
40 30 20 10 0
TJ = -40C 25C 150C
8
9
1 0
1 1
0
50
100
150
200
250
300
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 250 10 9 8 7 VDS = 50V I D = 55A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
200 150 100 50 0
6 5 4 3 2 1 0
V S D - Volts
0
20
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
40
60
80
100
120
Fig. 11. Capacitance
10000 1000
TJ = 175C
Capacitance - picoFarads
TC = 25C
I D - Amperes
C iss
R DS(on) Limit 25s 100 100s 1ms
1000 C oss
C rss f = 1MHz 100 0 5 10 15 20 25 30 35 40 10 1 10
10ms DC
100
1000
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715
V D S - Volts
6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505
6,683,344 6,710,405B2
IXTQ 110N10P IXTT 110N10P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2004 IXYS All rights reserved

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